Graphene Formation on SiC Substrates

Graphene formation mechanisms on 4H-SiC(0001)

Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates

We are aiming at understanding graphene formation mechanism on different SiC polytypes (6H, 4H and 3C) and orientations with the ultimate goal to fabricate large area graphene (up to 2 inch) with controlled number of mono layers and spatial uniformity. To reach the objectives we are using high-temperature atmospheric pressure sublimation process in an inductively heated furnace. The epitaxial g...

Upright standing graphene formation on substrates.

We propose integrating graphene nanoribbons (GNRs) onto a substrate in an upright position whereby they are chemically bound to the substrate at the basal edge. Extensive ab initio calculations show that both nickel (Ni)- and diamond-supported upright GNRs are feasible for synthesis and are mechanically robust. Moreover, the substrate-supported GNRs display electronic and magnetic properties ne...

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated ...

Graphene nanoribbon field - e � ect transistors on wafer - scale epitaxial graphene on SiC substrates a

Wan Sik Hwang,1,2,b Pei Zhao,1 Kristof Tahy,1 Luke O. Nyakiti,3,4 Virginia D. Wheeler,3 Rachael L. Myers-Ward,3 Charles R. Eddy, Jr.,3 D. Kurt Gaskill,3 Joshua A. Robinson,5 Wilfried Haensch,6 Huili (Grace) Xing,1 Alan Seabaugh,1 and Debdeep Jena1,b 1 Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA 2Department of Materials Engineering, Korea Aerosp...